To improve performance and reduce size, Hitachi Semiconductor (America) Inc. has introduced a power amplifier module that uses MOSFETs instead of gallium arsenide ICs. The 6mm2 MOSFET-based module has ...
TOKYO–Hitachi Ltd. and RF Micro Devices Inc. today announced a cross-supply agreement for gallium-arsenide (GaAs) heterojunction bipolar transistors (HBTs) and modules, including cooperation in design ...
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