Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low figure-of-merit (FOM) ...

Accordany to the company, the family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the ...

It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, and IGBTs but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Dependence of barrier height on the electric field, Energy band diagram of Schottky contact under bias, Thermionic emission current, Ohmic contact by heavy doping in semiconductor, Ohmic contact by ...