Infineon is mainly targeting the two market with its expanding portfolio of 2 kV power devices: the solar sector and the ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Diodes has expanded its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Diodes unveils new SiC Schottky diodes ...

The high-performance SiC diodes are also notable for their lowest ... particularly in comparison to silicon Schottky devices. This reduction in heat dissipation also lowers cooling costs and ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low figure-of-merit (FOM) ...

It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, and IGBTs but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...