School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, ...

A research team at NIMS has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). This breakthrough marks a significant step toward realizing CMOS ...

A major breakthrough came in 1947, when John Baden, William Shockley and Watter Brattain of Bell labs unveiled the first functioning point contact Germanium transistor. In 1950, Shockley developed the ...